The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2025
Filed:
Aug. 19, 2022
SK Hynix Inc., Icheon-si, KR;
Soo Man Seo, Icheon-si, KR;
SK HYNIX INC., Icheon-si, KR;
Abstract
A semiconductor device may include: a plurality of first conductive lines; a plurality of second conductive lines disposed over the first conductive lines to be spaced apart from the first conductive line, a variable resistance layer disposed above the first conductive line and below the second conductive line; at least one of a first interlayer dielectric layer or a second interlayer dielectric layer; at least one of a first contact or a second contact, wherein the first selector layer is disposed in a portion of the first interlayer dielectric layer below the first contact and the second selector layer is disposed in a portion of the second dielectric layer below the second contact, wherein the first selector layer includes a dielectric material of the first interlayer dielectric layer and a dopant, and the second selector layer includes a dielectric material of the second interlayer dielectric layer and a dopant.