The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 19, 2025

Filed:

May. 17, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Shinyeol Choi, Suwon-si, KR;

Kyung-Min Kim, Suwon-si, KR;

Hoyong Na, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H04N 25/77 (2023.01); H04N 25/62 (2023.01); H04N 25/78 (2023.01);
U.S. Cl.
CPC ...
H04N 25/77 (2023.01); H04N 25/62 (2023.01); H04N 25/78 (2023.01);
Abstract

An image sensor includes a pixel array that includes a plurality of pixels, and a row driver. Each pixel includes a photodiode, a transfer gate transistor between the photodiode and a floating diffusion node, and a first transistor between the floating diffusion node and a first voltage node configured to receive a first voltage. The row driver is connected with rows of the pixels through row lines. For each pixel of a selected row among the rows, the row driver is configured to apply a second voltage to a gate of the first transistor such that the first transistor is turned on and the floating diffusion node is reset, and turn on the transfer gate transistor such that electrons integrated in the photodiode are dumped to the floating diffusion node.


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