The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 19, 2025

Filed:

Jan. 27, 2023
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Je-Hsiung Lan, San Diego, CA (US);

Jonghae Kim, San Diego, CA (US);

Nosun Park, San Diego, CA (US);

Jui-Yi Chiu, Taichung, TW;

Kai Liu, Phoenix, AZ (US);

Assignee:

QUALCOMM INCORPORATED, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 9/54 (2006.01); H03H 3/02 (2006.01); H03H 3/08 (2006.01); H03H 9/05 (2006.01); H03H 9/17 (2006.01); H03H 9/25 (2006.01); H03H 9/64 (2006.01); H10D 1/68 (2025.01);
U.S. Cl.
CPC ...
H03H 9/542 (2013.01); H03H 3/02 (2013.01); H03H 3/08 (2013.01); H03H 9/0557 (2013.01); H03H 9/171 (2013.01); H03H 9/25 (2013.01); H03H 9/64 (2013.01); H10D 1/68 (2025.01);
Abstract

A compact, hybrid, acoustic wave filter structure is disclosed. In an aspect an apparatus comprises a substrate; a first, multi-layer metallization structure disposed above the substrate; a plurality of pillar structures disposed above, and electrically coupled to, the first metallization structure; a second metallization structure disposed above, an electrically coupled to, the plurality of pillar structures. An acoustic unit (AU) is disposed between the first and second metallization structures and adjacent to at least one of the pillar structures. The AU comprises a surface acoustic wave or bulk acoustic wave acoustic resonator that is electrically coupled to a capacitor and an inductor. The capacitor comprises a metal-insulation-metal capacitor that is formed from a portion of the first metallization structure and optionally also from at least one pillar structure and a portion of the second metallization structure. The inductor is comprised of a second portion of the first metallization structure.


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