The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2025
Filed:
Dec. 12, 2022
Stmicroelectronics S.r.l., Agrate Brianza, IT;
Stmicroelectronics (Rousset) Sas, Rousset, FR;
Vincenzo Randazzo, Biancavilla, IT;
Alberto Marzo, Giarre, IT;
Giovanni Susinna, Catania, IT;
Vanni Poletto, Milan, IT;
Antoine Pavlin, Puyricard, FR;
Calogero Andrea Trecarichi, Gela, IT;
Mirko Dondini, Catania, IT;
Roberto Crisafulli, San Gregorio di Catania, IT;
Enrico Castro, Catania, IT;
Romeo Letor, Mascalucia, IT;
STMICROELECTRONICS S.r.l., Agrate Brianza, IT;
STMICROELECTRONICS (ROUSSET) SAS, Rousset, FR;
Abstract
Embodiments are directed to electronic fuse devices and systems. One such electronic fuse includes current sensing circuitry that senses a current in a conductor coupled between a power supply and a load, and generates a current sensing signal indicative of the sensed current. I2t circuitry receives the current sensing signal and determines whether the sensed current exceeds an I2t curve of the conductor. The electronic fuse further includes at least one of external MOSFET temperature sensing circuitry that senses a temperature of an external MOSFET coupled to the conductor, low current bypass circuitry that supplies a reduced current to the load in a low power consumption mode during which the external MOSFET is in a non-conductive state, or desaturation sensing circuitry that senses a drain-source voltage of the external MOSFET.