The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2025
Filed:
Jul. 06, 2022
Applicant:
Nanya Technology Corporation, New Taipei, TW;
Inventors:
Wei-Zhong Li, Taoyuan, TW;
Hsih-Yang Chiu, Taoyuan, TW;
Assignee:
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/525 (2006.01); G11C 11/16 (2006.01); G11C 17/16 (2006.01); H10B 12/00 (2023.01); H10B 20/25 (2023.01);
U.S. Cl.
CPC ...
H01L 23/5256 (2013.01); G11C 17/165 (2013.01); H10B 20/25 (2023.02);
Abstract
A semiconductor device is provided. The semiconductor device includes a substrate having an active area and a fuse component. The fuse component has a bottom electrode in the active area, a first dielectric layer on the active area and a top electrode on the first dielectric layer. The semiconductor device also includes a second dielectric layer on the active area and surrounding the first dielectric layer.