The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2025
Filed:
Jun. 14, 2022
Applicant:
Nanya Technology Corporation, New Taipei, TW;
Inventor:
Hsih-Yang Chiu, Taoyuan, TW;
Assignee:
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01H 85/02 (2006.01); H01H 69/02 (2006.01); H01L 23/525 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5256 (2013.01); H01H 69/02 (2013.01); H01H 85/0241 (2013.01); H01H 2085/0283 (2013.01);
Abstract
A method for fabricating a semiconductor device is provided. The method includes providing a substrate; forming a fuse element within the substrate and extending from an upper surface of the substrate; and forming a fuse medium in contact with the fuse element, wherein the fuse medium is spaced apart from the upper surface of the substrate.