The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2025
Filed:
Aug. 17, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Yongmin Kim, Hwaseong-si, KR;
Moonjong Kang, Yongin-si, KR;
Miyoun Kim, Seongnam-si, KR;
Sungil Moon, Suwon-si, KR;
Jongsu Park, Hwaseong-si, KR;
Heonju Lee, Hwaseong-si, KR;
Sunkak Jo, Ansan-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
According to example embodiments, a method of manufacturing a semiconductor device is provided. The method includes forming an etching target layer on a substrate; forming a first photoresist layer on the etching target layer; forming a first alignment key under the first photoresist layer and a first alignment pattern aligned in a first direction perpendicular to a top surface of the substrate, by exposing and developing the first photoresist layer; forming a second alignment key under the first photoresist layer and a second alignment pattern aligned in the first direction, by exposing and developing the first photoresist layer; and forming a third alignment key aligned with the first alignment key in the first direction under the first photoresist layer and a fourth alignment key aligned with the second alignment key in the first direction on the etching target layer based on the first and second alignment patterns.