The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2025
Filed:
May. 25, 2021
Imec Vzw, Leuven, BE;
Didit Yudistira, Kessel-Lo, BE;
Alexey Milenin, Heverlee, BE;
Imec vzw, Leuven, BE;
Abstract
A Silicon on Insulator (SOI) structure and a method for creating an undercut (UCUT) in an SOI structure, in particular, for a 300 mm SOI platform, is provided. In particular, the method includes fabricating one or more cavities in a silicon substrate underneath an insulator layer of the SOI structure by performing a first dry etch of the silicon substrate to create the one or more cavities, performing a first wet etch of the silicon substrate to expand the one or more cavities, performing a second dry etch of the silicon substrate to further expand the one or more cavities and to break silicon facets created by the first wet etch, and performing a second wet etch to further expand the one or more cavities.