The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 19, 2025

Filed:

Sep. 11, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventor:

Hyun Seo, Suwon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/10 (2006.01); G11C 7/04 (2006.01); G11C 7/14 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 16/10 (2006.01); G11C 16/24 (2006.01); G11C 16/32 (2006.01);
U.S. Cl.
CPC ...
G11C 16/10 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 16/24 (2013.01); G11C 16/32 (2013.01);
Abstract

In a method of programming data in a nonvolatile memory device including memory cells and a page buffer, the memory cells are electrically connected to wordlines and bitlines, and the page buffer controls the memory cells. In a first program time period of a first program loop, a program voltage having a first program voltage is applied to a selected wordline that is electrically connected to a target memory cell, and a bitline shut-off signal having a first delay is applied to the page buffer. The program voltage is applied to the selected wordline multiple times during one program loop while a magnitude of the program voltage is changed. The delay of the bitline shut-off signal corresponds to a time period during which the bitline shut-off signal maintains a ground voltage.


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