The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2025
Filed:
Aug. 25, 2023
Kioxia Corporation, Tokyo, JP;
Reika Tanaka, Yokohama Kanagawa, JP;
Kensuke Ota, Yokohama Kanagawa, JP;
Masamichi Suzuki, Koto Tokyo, JP;
Kioxia Corporation, Tokyo, JP;
Abstract
According to one embodiment, a memory device includes a pillar extending in a first direction through a first, second, and third conductive layers. The pillar includes ferroelectric layer. A first transistor is at an intersection of the pillar and the first conductive layer. A second transistor is at an intersection of the pillar and the second conductive layer. A ferroelectric memory cell is at an intersection with the third conductive layer and the pillar. A circuit supplies a read pulse to the memory cell in a read sequence. The read pulse has a first voltage value in a first period and has a second voltage value with the same polarity as the first voltage value in a second period after the first period. The second voltage value is lower than the first.