The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2025
Filed:
Mar. 28, 2023
Mitsubishi Electric Corporation, Tokyo, JP;
Yuki Horikawa, Tokyo, JP;
Hirofumi Konishi, Tokyo, JP;
Fusako Tanabe, Tokyo, JP;
Mayumi Fujiwara, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A semiconductor pressure sensor includes a first silicon substrate and a second silicon substrate. One main surface of the second silicon substrate has a recess formed therein. The recess has a support that protrudes toward the first silicon substrate formed therein. The support includes four side parts that are arranged to form a rectangular frame shape. The recess and the first silicon substrate have an inner cavity and an outer cavity that are formed therebetween. The inner cavity is arranged on an inner side of the support, and the outer cavity is arranged on an outer side of the support. The other main surface of the first silicon substrate has piezoresistive elements formed therein. The piezoresistive elements are arranged at or in the vicinity of a position overlapping the support, as seen from a normal direction of the first silicon substrate.