The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 19, 2025

Filed:

Oct. 26, 2022
Applicant:

Board of Trustees of Michigan State University, East Lansing, MI (US);

Inventors:

Marcos Dantus, Okemos, MI (US);

Timothy A. Grotjohn, Okemos, MI (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/27 (2006.01); C01B 32/28 (2017.01); C23C 16/04 (2006.01); C23C 16/511 (2006.01); C23C 16/56 (2006.01); C30B 25/02 (2006.01); C30B 25/04 (2006.01); C30B 25/10 (2006.01); C30B 25/18 (2006.01); C30B 29/04 (2006.01); C30B 31/06 (2006.01); C30B 33/02 (2006.01); C30B 33/04 (2006.01); C30B 33/12 (2006.01); B82Y 20/00 (2011.01);
U.S. Cl.
CPC ...
C23C 16/278 (2013.01); C01B 32/28 (2017.08); C23C 16/04 (2013.01); C23C 16/274 (2013.01); C23C 16/511 (2013.01); C23C 16/56 (2013.01); C30B 25/02 (2013.01); C30B 25/04 (2013.01); C30B 25/105 (2013.01); C30B 25/186 (2013.01); C30B 29/04 (2013.01); C30B 31/06 (2013.01); C30B 33/02 (2013.01); C30B 33/04 (2013.01); C30B 33/12 (2013.01); B82Y 20/00 (2013.01); C01P 2002/52 (2013.01);
Abstract

A laser activated luminescence system is provided. Another aspect pertains to a system employing a plasma assisted vapor deposition reactor which creates diamond layers on a substrate, in combination with a laser system to at least photoactivate and anneal the diamond layers. Yet another aspect of the present system uses a laser to assist with placement of color centers, such as nitrogen vacancy centers, in diamond. The present method uses lasers to manufacture more than two activated nitrogen vacancy center nodes in a diamond substrate, with nanometer spatial resolution and at a predetermined depth.


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