The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2025
Filed:
Oct. 21, 2020
Applicant:
National Institutes for Quantum Science and Technology, Chiba, JP;
Inventors:
Songtian Li, Chiba, JP;
Seiji Sakai, Chiba, JP;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/82 (2006.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/80 (2023.01);
U.S. Cl.
CPC ...
H10N 50/80 (2023.02); H10B 61/00 (2023.02); H10N 50/01 (2023.02);
Abstract
A layered structure which achieves both high spin polarization and low electrical resistance is provided. The layered structure includes a Heusler alloy, and graphene that is in direct contact with the surface of the Heusler alloy. Such a layered structure is fabricated by forming a thin film of the Heusler alloy over a substrate under vacuum, and growing graphene on the surface of the thin film of the Heusler alloy while maintaining the vacuum.
Quick Actions:
Li, Songtian. (2025). Layered structure, magnetoresistive device using the same, and method of fabricating layered structure (U.S. Patent No. 12389805). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12389805
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile