The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 12, 2025

Filed:

Jul. 28, 2022
Applicant:

Lg Display Co., Ltd., Seoul, KR;

Inventor:

Byungjin Kim, Paju-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10K 50/844 (2023.01); H10D 30/67 (2025.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01); H10K 50/84 (2023.01); H10K 59/121 (2023.01); H10K 59/122 (2023.01); H10K 59/124 (2023.01); H10K 59/126 (2023.01); H10K 59/131 (2023.01);
U.S. Cl.
CPC ...
H10K 50/844 (2023.02); H10K 50/846 (2023.02); H10K 59/1213 (2023.02); H10K 59/122 (2023.02); H10K 59/124 (2023.02); H10K 59/126 (2023.02); H10K 59/1315 (2023.02); H10D 30/6723 (2025.01); H10D 30/6755 (2025.01); H10D 86/423 (2025.01); H10D 86/60 (2025.01);
Abstract

An electroluminescent display device includes a substrate including a display area and a non-display area including a gate-in-panel (GIP) area disposed outside the display area, an oxide thin-film transistor disposed above the substrate, a planarization layer disposed above the oxide thin-film transistor, an anode disposed above the planarization layer, a bank disposed above the planarization layer and including an opening portion through which a part of the anode is exposed, a plurality of dams disposed outside the GIP area and configured by the planarization layer and the bank, a buffer layer disposed above the bank and the dam and made of silicon nitride, a light-emitting part disposed on the exposed anode and the buffer layer, and a cathode disposed on the light-emitting part, thereby inhibiting hydrogen from entering an oxide thin-film transistor and improve properties and reliability of the transistor.


Find Patent Forward Citations

Loading…