The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 12, 2025

Filed:

Feb. 09, 2022
Applicants:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;

Inventors:

Mami Fujihara, Nakatsu Oita, JP;

Masahiko Hori, Yokohama Kanagawa, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10H 20/857 (2025.01); H01L 25/075 (2006.01); H10H 20/01 (2025.01); H10H 20/854 (2025.01);
U.S. Cl.
CPC ...
H10H 20/857 (2025.01); H01L 25/0753 (2013.01); H10H 20/01 (2025.01); H10H 20/854 (2025.01); H10H 20/0362 (2025.01); H10H 20/0364 (2025.01);
Abstract

A semiconductor device includes an insulating member; a light-receiving element on a front surface of the insulating member; a light-emitting element on the light-receiving element; a first metal terminal electrically connected to the light-emitting element and provided on a back surface of the insulating member; a switching element mounted on the front surface via a metal pad, the switching element being electrically connected to the light-receiving element; and a second metal terminal provided on the back surface and electrically connected to the switching element via the metal pad. The insulating member has a first thickness in a first direction directed from the back surface toward the front surface. The metal pad has a second thickness in the first direction. The second metal terminal has a third thickness in the first direction. The first thickness is less than a combined thickness of the second and third thicknesses.


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