The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2025
Filed:
Mar. 07, 2022
National University Corporation Tokai National Higher Education and Research System, Nagoya, JP;
Osaka University, Suita, JP;
Nichia Corporation, Anan, JP;
Tsukasa Torimoto, Nagoya, JP;
Tatsuya Kameyama, Nagoya, JP;
Chie Miyamae, Nagoya, JP;
Susumu Kuwabata, Ibaraki, JP;
Taro Uematsu, Suita, JP;
Tomoya Kubo, Tokushima, JP;
National University Corporation Tokai National Higher Education and Research System, Nagoya, JP;
OSAKA UNIVERSITY, Suita, JP;
NICHIA CORPORATION, Anan, JP;
Abstract
Provided is a method for producing semiconductor nanoparticles. The method includes: providing first semiconductor nanoparticles containing a semiconductor containing an element M1, an element M2 and an element Z, wherein the element M1 is at least one element selected from the group consisting of Ag, Cu, Au and an alkali metal, and contains at least Ag, the element M2 is at least one element selected from the group consisting of Al, Ga, In and Tl, and contains at least one of In and Ga, and the element Z contains at least one element selected from the group consisting of S, Se and Te; and heat-treating a mixture containing the first semiconductor nanoparticles, a first compound having a Ga—S bond, a second compound containing Ga and not containing S, and an organic solvent to obtain second semiconductor nanoparticles.