The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 12, 2025

Filed:

Oct. 24, 2022
Applicant:

Xiamen San'an Optoelectronics Co., Ltd., Xiamen, CN;

Inventors:

Huining Wang, Xiamen, CN;

Linhua Cao, Xiamen, CN;

Hongwei Xia, Xiamen, CN;

Chunlan He, Xiamen, CN;

Lili Jiang, Xiamen, CN;

Su-Hui Lin, Xiamen, CN;

Renlong Yang, Xiamen, CN;

Chung-Ying Chang, Xiamen, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10H 20/831 (2025.01); H10H 20/841 (2025.01);
U.S. Cl.
CPC ...
H10H 20/831 (2025.01); H10H 20/841 (2025.01);
Abstract

An LED device includes an epitaxial layered structure that includes a first semiconductor layer, a light emitting layer and a second semiconductor layer, first and second electrodes that are disposed on the epitaxial layered structure, and an insulating structure. The first electrode includes a first body portion and a first extending portion connected together. The first extending portion includes a first part and multiple second parts. A projection of the first part on the first semiconductor layer does not overlap a projection of the insulating structure on the first semiconductor layer. The first part has a first sub-part and multiple second sub-parts. A projection of the first sub-part on the first semiconductor layer has a first length, and a projection of each of the second sub-parts on the first semiconductor layer independently has a second length measured in the same direction. The first length is greater than the second length.


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