The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2025
Filed:
Feb. 24, 2022
Applicant:
Nichia Corporation, Anan, JP;
Inventor:
Shunsuke Minato, Anan, JP;
Assignee:
NICHIA CORPORATION, Anan, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10H 20/81 (2025.01); H10H 20/01 (2025.01); H10H 20/80 (2025.01); H10H 20/812 (2025.01); H10H 20/813 (2025.01); H10H 20/818 (2025.01); H10H 20/825 (2025.01);
U.S. Cl.
CPC ...
H10H 20/8215 (2025.01); H10H 20/01335 (2025.01); H10H 20/01 (2025.01); H10H 20/018 (2025.01); H10H 20/812 (2025.01); H10H 20/813 (2025.01); H10H 20/818 (2025.01); H10H 20/8252 (2025.01); H10H 20/882 (2025.01);
Abstract
A semiconductor light emitting element includes: a first light emitting part comprising: a first n-side nitride semiconductor layer; a first active layer located on the first n-side nitride semiconductor layer; and a first p-side nitride semiconductor layer located on the first active layer; and a second n-side nitride semiconductor layer. A bonding face of the first light emitting part and a bonding face of the second n-side nitride semiconductor layer are directly bonded. At least one void is present between the bonding face of the first light emitting part and the bonding face of the second n-side nitride semiconductor layer.