The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 12, 2025

Filed:

May. 06, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventor:

Juyoun Kim, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 89/10 (2025.01); H10D 64/27 (2025.01); H10D 84/85 (2025.01);
U.S. Cl.
CPC ...
H10D 89/10 (2025.01); H10D 64/514 (2025.01); H10D 64/518 (2025.01); H10D 84/85 (2025.01);
Abstract

Disclosed is a semiconductor device comprising a substrate including a peripheral region and a logic cell region, a first channel pattern including a first and a second semiconductor pattern stacked vertically on the peripheral region, a first gate electrode across the first channel pattern and extending in a first direction, a second channel pattern including a third and a fourth semiconductor pattern stacked vertically on the logic cell region, and a second gate electrode across the second channel pattern and extending in the first direction, the second gate electrode having a second width in a second direction less than a first width in the second direction of the first gate electrode. The first gate electrode has a first thickness between the first and the second semiconductor pattern, and the second gate electrode has a second thickness between the third and the fourth semiconductor pattern greater than the first thickness.


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