The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 12, 2025

Filed:

Jun. 16, 2022
Applicant:

Samsung Display Co., Ltd., Yongin-Si, KR;

Inventors:

Myeongho Kim, Hwaseong-si, KR;

Jaybum Kim, Suwon-si, KR;

Kyoung Seok Son, Seoul, KR;

Seungjun Lee, Suwon-si, KR;

Seunghun Lee, Seoul, KR;

Jun Hyung Lim, Seoul, KR;

Assignee:

Samsung Display Co., Ltd., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 86/40 (2025.01); H10D 86/01 (2025.01); H10D 86/60 (2025.01); H10K 59/121 (2023.01); G09G 3/32 (2016.01);
U.S. Cl.
CPC ...
H10D 86/481 (2025.01); H10D 86/021 (2025.01); H10D 86/423 (2025.01); H10D 86/441 (2025.01); H10D 86/60 (2025.01); H10K 59/1216 (2023.02); G09G 3/32 (2013.01); G09G 2300/0426 (2013.01); G09G 2300/0876 (2013.01);
Abstract

A display device includes a first semiconductor layer, a first conductive layer disposed on the first semiconductor layer and including a first capacitor electrode at least partially overlapping the first semiconductor layer in a plan view to constitute a first transistor, a second capacitor electrode disposed on the first conductive layer and overlapping the first capacitor electrode in a plan view to constitute a first capacitor, a second semiconductor layer disposed on the second capacitor electrode and including a third capacitor electrode overlapping the second capacitor electrode in a plan view to constitute a second capacitor, a second conductive layer disposed on the second semiconductor layer and at least partially overlapping the second semiconductor layer, and a third conductive layer disposed over the second conductive layer to implement a high-resolution image by overlapping the first capacitor electrode, the second capacitor electrode, and the third capacitor electrode.


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