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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12389679 B1

PDFFull Text
Date of Patent:
Aug. 12, 2025

Filed:

May. 22, 2023

Organic light-emitting display device having a gate insulating with controlled number of oxygen atoms

Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Sangjin Park, Yongin-si, KR;

Youngdae Kim, Yongin-si, KR;

Jeongseon Kim, Yongin-si, KR;

Sangjin Lee, Yongin-si, KR;

Ahyeon Lee, Yongin-si, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Yongin-si, KR;

Attorney:

F. CHAU & ASSOCIATES, LLC

Primary Examiner:

Phuc T Dang

Int. Cl.
CPC ...
H01L 29/08 (2006.01); G09G 3/3233 (2016.01); H10D 86/40 (2025.01); H10K 59/121 (2023.01); H10K 71/00 (2023.01); H10D 86/60 (2025.01); H10K 59/12 (2023.01); H10K 71/40 (2023.01);
U.S. Cl.
CPC ...
H10D 86/431 (2025.01); G09G 3/3233 (2013.01); H10K 59/1213 (2023.02); H10K 71/00 (2023.02); G09G 2300/0819 (2013.01); G09G 2320/0257 (2013.01); H10D 86/60 (2025.01); H10K 59/1201 (2023.02); H10K 71/40 (2023.02);
Abstract

An organic light-emitting display device includes a driving transistor configured to control current to an organic light-emitting diode from a power voltage line, a compensation transistor configured to diode-connect the driving transistor in response to a voltage applied to a compensation gate electrode of the driving transistor, and a gate insulating layer interposed between a driving active region of the driving transistor and the driving gate electrode, and between a compensation active region of the compensation transistor and the compensation gate electrode. A dielectric constant in a first portion of the gate insulating layer between the driving active region and the driving gate electrode is greater than a dielectric constant in a second portion of the gate insulating layer between the compensation active region and the compensation gate electrode.

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