The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 12, 2025

Filed:

Jan. 08, 2024
Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventor:

Tadashi Yamaguchi, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 64/68 (2025.01); G11C 11/22 (2006.01); H10B 51/10 (2023.01); H10B 51/30 (2023.01); H10D 30/69 (2025.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H10D 64/033 (2025.01); G11C 11/223 (2013.01); H10B 51/10 (2023.02); H10B 51/30 (2023.02); H10D 30/701 (2025.01); H10D 64/689 (2025.01); H10D 64/691 (2025.01);
Abstract

A first amorphous film containing hafnium, oxygen and a first element such as zirconium is formed, a plurality of grains containing a second element different from any of hafnium, oxygen and the first element are formed on the first amorphous film, a second amorphous film made of the same material as the first amorphous film is formed on the plurality of grains and on the first amorphous film, and a metal film is formed on the second amorphous film. Thereafter, by performing heat treatment, the first amorphous film is crystallized to form a first orthorhombic ferroelectric film and the second amorphous film is crystallized to form a second orthorhombic ferroelectric film.


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