The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2025
Filed:
May. 11, 2020
Applicant:
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Inventors:
Takayuki Ikeda, Atsugi, JP;
Hitoshi Kunitake, Isehara, JP;
Hajime Kimura, Atsugi, JP;
Haruyuki Baba, Isehara, JP;
Assignee:
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Primary Examiner:
Int. Cl.
CPC ...
H03F 1/22 (2006.01); H01L 23/66 (2006.01); H03F 3/193 (2006.01); H10D 62/80 (2025.01); H10D 84/01 (2025.01); H10D 84/80 (2025.01);
U.S. Cl.
CPC ...
H10D 62/80 (2025.01); H01L 23/66 (2013.01); H03F 3/193 (2013.01); H10D 84/01 (2025.01); H10D 84/811 (2025.01); H01L 2223/6677 (2013.01);
Abstract
A semiconductor device with low power consumption is provided. In a cascode circuit including a first transistor provided on a low power supply potential side and a second transistor provided on a high power supply potential side, a source or a drain of a third transistor and a capacitor are connected to a gate of the second transistor. A gate of the first transistor is electrically connected to a back gate of the second transistor. An OS transistor is used as the third transistor.