The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2025
Filed:
May. 03, 2024
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Henry Litzmann Edwards, Garland, TX (US);
Joseph Maurice Khayat, Bedford, NH (US);
Archana Venugopal, Mountain View, CA (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/10 (2025.01); H10D 8/00 (2025.01); H10D 8/01 (2025.01);
U.S. Cl.
CPC ...
H10D 62/108 (2025.01); H10D 8/00 (2025.01); H10D 8/024 (2025.01);
Abstract
An integrated circuit includes a shallow P-type well (SPW) below a surface of a semiconductor substrate and a shallow N-type well (SNW) below the surface. The SPW forms an anode of a diode and the SNW forms a cathode of the diode. The SNW is spaced apart from the SPW by a well space region; and a thin field relief oxide structure lies over the well space region.