The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2025
Filed:
Dec. 01, 2023
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Yutaka Okazaki, Kanagawa, JP;
Akihisa Shimomura, Kanagawa, JP;
Naoto Yamade, Kanagawa, JP;
Tomoya Takeshita, Kanagawa, JP;
Tetsuhiro Tanaka, Tokyo, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Abstract
A transistor with favorable electrical characteristics is provided. One embodiment of the present invention is a semiconductor device including a semiconductor, a first insulator in contact with the semiconductor, a first conductor in contact with the first insulator and overlapping with the semiconductor with the first insulator positioned between the semiconductor and the first conductor, and a second conductor and a third conductor, which are in contact with the semiconductor. One or more of the first to third conductors include a region containing tungsten and one or more elements selected from silicon, carbon, germanium, tin, aluminum, and nickel.