The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2025
Filed:
Mar. 16, 2022
Applicant:
Denso Corporation, Kariya, JP;
Inventor:
Hiromitsu Tanabe, Kariya, JP;
Assignee:
DENSO CORPORATION, Kariya, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 12/00 (2025.01); H10D 8/00 (2025.01); H10D 62/10 (2025.01); H10D 62/17 (2025.01);
U.S. Cl.
CPC ...
H10D 12/481 (2025.01); H10D 8/411 (2025.01); H10D 62/127 (2025.01); H10D 62/393 (2025.01);
Abstract
In an IGBT region of a semiconductor device, a barrier region is disposed above a drift layer, and a contact trench is disposed between adjacent gate trenches in a semiconductor substrate. A first electrode is embedded in the contact trench. A connecting region is disposed between a bottom surface of the contact trench and the barrier region, and is connected to the barrier region and the first electrode. Further, the emitter region and the contact region are arranged in a direction different from an arrangement direction of the gate trenches. Thus, the semiconductor device can be miniaturized.