The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2025
Filed:
Feb. 01, 2024
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Sang-Yong Park, Suwon-si, KR;
Jintaek Park, Hwaseong-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 23/528 (2006.01); H10B 43/10 (2023.01); H10B 43/20 (2023.01); H10B 43/35 (2023.01); H10D 30/01 (2025.01); H10D 30/69 (2025.01); H10D 64/01 (2025.01); H10D 89/10 (2025.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H01L 21/31144 (2013.01); H01L 21/32139 (2013.01); H01L 23/5283 (2013.01); H10B 43/10 (2023.02); H10B 43/20 (2023.02); H10B 43/35 (2023.02); H10D 30/0413 (2025.01); H10D 30/693 (2025.01); H10D 64/037 (2025.01); H10D 89/10 (2025.01); H01L 2924/0002 (2013.01);
Abstract
A three-dimensional semiconductor device includes a stacked structure including a plurality of conductive layers stacked on a substrate, a distance along a first direction between sidewalls of an upper conductive layer and a lower conductive layer being smaller than a distance along a second direction between sidewalls of the upper conductive layer and the lower conductive layer, the first and second directions crossing each other and defining a plane parallel to a surface supporting the substrate, and vertical channel structures penetrating the stacked structure.