The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 12, 2025

Filed:

Mar. 22, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jiwon Kim, Hwaseong-si, KR;

Sangdon Lee, Hwaseong-si, KR;

Sungmin Hwang, Hwaseong-si, KR;

Sukkang Sung, Seongnam-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); H01L 23/48 (2006.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 43/10 (2023.01); H10B 43/35 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H01L 23/481 (2013.01); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 43/10 (2023.02); H10B 43/35 (2023.02);
Abstract

A semiconductor device includes a stack structure, first separation patterns passing through the stack structure, a second separation pattern passing through at least a portion of the stack structure between the first separation patterns, and a cutting channel structure passing through the stack structure and having an end portion partially cut by the second separation pattern. A channel layer of the cutting channel structure has a ring shape cut by the second separation pattern to have end portions of the channel layer which are spaced apart from each other.


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