The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 12, 2025

Filed:

Feb. 19, 2024
Applicant:

Skyworks Solutions, Inc., Irvine, CA (US);

Inventors:

Sachin Nagarajan, Irvine, CA (US);

Abhishekh Devaraj, Irvine, CA (US);

Florinel G. Balteanu, Irvine, CA (US);

Yunyoung Choi, Irvine, CA (US);

Assignee:

Skyworks Solutions, Inc., Irvine, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04B 1/00 (2006.01); G05F 3/16 (2006.01); H02M 1/00 (2007.01); H02M 3/07 (2006.01); H03K 3/03 (2006.01); H04B 1/44 (2006.01);
U.S. Cl.
CPC ...
H04B 1/006 (2013.01); G05F 3/16 (2013.01); H02M 1/0041 (2021.05); H02M 3/07 (2013.01); H03K 3/0315 (2013.01); H04B 1/44 (2013.01);
Abstract

Apparatus and methods for radio frequency (RF) switch control are provided. In certain embodiments, a level shifter for an RF switch includes a first level-shifting n-type transistor, a first cascode n-type transistor in series with the first level-shifting n-type transistor between a negative charge pump voltage and a first output that provides a first switch control signal, a first level-shifting p-type transistor, a first cascode p-type transistor in series with the first level-shifting p-type transistor between a positive charge pump voltage and the first output, and a second cascode p-type transistor between a regulated voltage and a gate of the first level-shifting n-type transistor and controlled by a first switch enable signal.


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