The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 12, 2025

Filed:

Aug. 11, 2023
Applicant:

Rohm Co., Ltd., Kyoto, JP;

Inventor:

Takashige Miyashita, Kyoto, JP;

Assignee:

Rohm Co., Ltd., Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 19/0185 (2006.01); H03K 3/356 (2006.01);
U.S. Cl.
CPC ...
H03K 19/018521 (2013.01); H03K 3/356113 (2013.01);
Abstract

A level shift circuit includes a low voltage side circuit arranged to receive an input signal, and a high voltage side circuit arranged to output an output signal obtained by level shifting the input signal. The low voltage side circuit includes a switching transistor arranged to switch between on state and off state according to level of the input signal, and a capacitor connected in a path where current flows from the high voltage side circuit via the switching transistor. When the switching transistor switches to on state, rush current is generated, which is a transitional large current flowing through the path by the capacitor, so that level of the output signal is switched.


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Miyashita, Takashige. (2025). Level shift circuit (U.S. Patent No. 12388445). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12388445

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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