The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 12, 2025

Filed:

Mar. 29, 2022
Applicant:

Excelitas Technologies Corp., Waltham, MA (US);

Inventor:

Bartley C. Johnson, North Andover, MA (US);

Assignee:

Excelitas Technologies Corp., Waltham, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 3/098 (2006.01); H01S 5/028 (2006.01); H01S 5/04 (2006.01); H01S 5/068 (2006.01); H01S 5/183 (2006.01); H01S 5/343 (2006.01);
U.S. Cl.
CPC ...
H01S 5/18366 (2013.01); H01S 5/0281 (2013.01); H01S 5/041 (2013.01); H01S 5/068 (2013.01); H01S 5/18361 (2013.01); H01S 5/18383 (2013.01); H01S 5/18386 (2013.01); H01S 5/343 (2013.01);
Abstract

A very strong selection mechanism is provided in a tunable vertical cavity surface emitting laser (VCSEL) by manipulating the laser threshold to be different for TE and TM polarization by a employing a subwavelength grating in the laser cavity. The laser selects the polarization with the lowest threshold. The grating does not diffract and does not add loss to the cavity. It works by creating a large birefringence layer between the semiconductor and air sub-cavities of the full VCSEL. Multilayer stack calculations show that this results in a lower threshold for the TM polarization over the TE. This subwavelength grating layer, in one embodiment, replaces the AR coating on the semiconductor surface.


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