The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 12, 2025

Filed:

Mar. 15, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Dahee Kim, Cheonan-si, KR;

Gookmi Song, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 25/10 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49822 (2013.01); H01L 23/3128 (2013.01); H01L 24/08 (2013.01); H01L 25/105 (2013.01); H01L 2224/08235 (2013.01); H01L 2225/1058 (2013.01);
Abstract

A semiconductor package includes a semiconductor chip including a connecting pad, a mold layer covering the semiconductor chip, a lower redistribution layer on the semiconductor chip and the mold layer, and a connecting terminal on the lower redistribution layer. The lower redistribution layer includes a first lower insulating layer, a first conformal redistribution pattern extending through the first lower insulating layer, a second lower insulating layer on the first lower insulating layer and the first conformal redistribution pattern, and a first filled redistribution pattern disposed on the first conformal redistribution pattern and extending through the second lower insulating layer. A side surface of the first filled redistribution pattern is spaced apart from an inner side surface of the first conformal redistribution pattern. The second lower insulating layer is between the inner side surface of the first conformal redistribution pattern and the side surface of the first filled redistribution pattern.


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