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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12387868 B1

PDFFull Text
Date of Patent:
Aug. 12, 2025

Filed:

Apr. 13, 2023

Semiconductor device and semiconductor module

Applicant:

Rohm Co., Ltd., Kyoto, JP;

Inventors:

Kosei Osada, Kyoto, JP;

Isamu Nishimura, Kyoto, JP;

Tetsuya Kagawa, Kyoto, JP;

Daiki Yanagishima, Kyoto, JP;

Toshiyuki Ishikawa, Kyoto, JP;

Michihiko Mifuji, Kyoto, JP;

Satoshi Kageyama, Kyoto, JP;

Nobuyuki Kasahara, Kyoto, JP;

Assignee:

ROHM CO., LTD., Kyoto, JP;

Attorney:

XSENSUS LLP

Primary Examiner:

Bitew A Dinke

Int. Cl.
CPC ...
H01F 27/28 (2006.01); H01L 23/495 (2006.01); H01L 23/522 (2006.01); H01L 23/58 (2006.01); H01L 23/64 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01F 27/288 (2013.01); H01F 27/2804 (2013.01); H01L 23/49575 (2013.01); H01L 23/5225 (2013.01); H01L 23/5227 (2013.01); H01L 23/585 (2013.01); H01L 23/645 (2013.01); H01F 2027/2819 (2013.01); H01L 23/3107 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05554 (2013.01); H01L 2224/05567 (2013.01); H01L 2224/06135 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/48195 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/49113 (2013.01); H01L 2224/49175 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/14 (2013.01); H01L 2924/19041 (2013.01); H01L 2924/19042 (2013.01); H01L 2924/19104 (2013.01);
Abstract

The semiconductor device of the present invention includes an insulating layer, a high voltage coil and a low voltage coil which are disposed in the insulating layer at an interval in the vertical direction, a low potential portion which is provided in a low voltage region disposed around a high voltage region for the high voltage coil in planar view and is connected with potential lower than the high voltage coil, and an electric field shield portion which is disposed between the high voltage coil and the low voltage region and includes an electrically floated metal member.

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