Dynamic single-level cell write through in memory devices

Abstract

This application is directed to writing data in a memory device supporting multiple bits per cell by dynamically using a y-level cell (YLC) cache. The memory device is coupled into a host device, and includes a plurality of x-level cell (XLC) memory blocks, where x is greater than one and greater than y. The memory device identifies a write shaping status of the host device. Based on the write shaping status, the memory device determines that the host device performs write operations without a memory-based cache. In accordance with a determination that the host device performs write operations without the memory-based cache, a YLC cache is allocated in the memory device to act as the memory-based cache. In response to one or more write requests, the memory device stores data into the plurality of XLC memory blocks via the YLC cache.