The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 12, 2025

Filed:

Oct. 15, 2021
Applicant:

Pusan National University Industry-university Cooperation Foundation, Busan, KR;

Inventors:

Se Young Jeong, Busan, KR;

Su Jae Kim, Busan, KR;

You Sil Lee, Busan, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 5/08 (2006.01); C30B 23/08 (2006.01); C30B 29/02 (2006.01); C30B 29/20 (2006.01); C30B 29/68 (2006.01); G02B 1/02 (2006.01);
U.S. Cl.
CPC ...
G02B 5/0808 (2013.01); C30B 23/08 (2013.01); C30B 29/02 (2013.01); C30B 29/20 (2013.01); C30B 29/68 (2013.01); G02B 1/02 (2013.01);
Abstract

There are provided a large-area single-crystal silver thin-film structure using a single-crystal copper thin-film buffer layer, and a method for manufacturing same. The large-area single-crystal silver thin-film structure includes a transparent substrate; a single-crystal copper thin-film buffer layer formed by deposition on the transparent substrate; and a single-crystal silver thin-film layer deposited on the single-crystal copper thin-film buffer layer and having a certain directionality.


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