The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 12, 2025

Filed:

May. 23, 2023
Applicant:

Infineon Technologies Canada Inc., Ottawa, CA;

Inventors:

Lucas Andrew Milner, Sunnyvale, CA (US);

Marco A. Zuniga, Berkeley, CA (US);

Nan Xing, Allen, TX (US);

Robert Wayne Mounger, Dallas, TX (US);

Edward Macrobbie, Nepean, CA;

Sridhar Ramaswamy, Allen, TX (US);

Ahmad Mizannojehdehi, Stittsville, CA;

Thomas William Macelwee, Nepean, CA;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 19/00 (2006.01);
U.S. Cl.
CPC ...
G01R 19/0092 (2013.01);
Abstract

A current sense circuit that allows for accurate sensing of a power current that flows through a power transistor as the power transistor ages. The circuit includes the power transistor, a sense transistor and a pull-up component. The control nodes of the power transistor and the sense transistor are connected, causing the power transistor and sense transistor to be on or off simultaneously. The pull-up component is connected between the input node of the power transistor and the input node of the sense transistor. When power is provided to the pull-up component, and when each of the power transistor and sense transistor are off, the pull-up component forces a voltage present at the sense transistor input node to be approximately equal to a voltage present at the power transistor input node, causing the sense and power transistors to age together.


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