The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 12, 2025

Filed:

Aug. 01, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Kwangeun Kim, Suwon-si, KR;

Seungbum Hong, Daejeon, KR;

Sungyoon Ryu, Seoul, KR;

Hoon Kim, Daejeon, KR;

Jiwon Yeom, Daejeon, KR;

Seokjung Yun, Daejeon, KR;

Souk Kim, Seoul, KR;

Younghoon Sohn, Seoul, KR;

Yusin Yang, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01Q 40/00 (2010.01); G01Q 70/10 (2010.01); H01L 21/66 (2006.01); G01Q 40/02 (2010.01); G01Q 60/38 (2010.01); G01Q 70/08 (2010.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
G01Q 40/00 (2013.01); G01Q 70/10 (2013.01); H01L 22/12 (2013.01); G01Q 40/02 (2013.01); G01Q 60/38 (2013.01); G01Q 70/08 (2013.01); H10B 12/053 (2023.02);
Abstract

A method of operating an atomic force microscope (AFM) is provided. The method includes inspecting a sample by using the AFM and inspecting a tip of a probe of the AFM by using a characterization sample. The characterization sample includes a first characterization pattern that includes a line and space pattern of a first height, a second characterization pattern that includes a line and space pattern of a second height that is lower than the first height, and a third characterization pattern that includes a line and space pattern of a third height that is lower than the second height, and includes a rough surface.


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