The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 12, 2025

Filed:

Dec. 02, 2021
Applicant:

Fujifilm Corporation, Tokyo, JP;

Inventors:

Masashi Ono, Kanagawa, JP;

Masahiro Takata, Kanagawa, JP;

Tetsushi Miyata, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09K 11/02 (2006.01); C09K 11/66 (2006.01); H04N 23/20 (2023.01); H10K 30/35 (2023.01); H10K 30/87 (2023.01); H10K 39/32 (2023.01); B82Y 20/00 (2011.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
C09K 11/025 (2013.01); C09K 11/661 (2013.01); H04N 23/20 (2023.01); H10K 30/35 (2023.02); H10K 30/87 (2023.02); H10K 39/32 (2023.02); B82Y 20/00 (2013.01); B82Y 40/00 (2013.01); H10K 30/352 (2023.02);
Abstract

A photodetector element includes a photoelectric conversion layer that contains aggregates of semiconductor quantum dots between a first electrode layer and a second electrode layer, where the first electrode layer is provided on a light incident side with respect to the second electrode layer, and a wavelength λ (nm) of target light to be detected by the photodetector element and an optical path length L(nm) of light having the wavelength λ, from a surface of the second electrode layer on a side of the photoelectric conversion layer to a surface of the photoelectric conversion layer on a side of the first electrode layer satisfy a relationship of the following Expression (1). m is an integer of 0 or more.0.05+/2≤/λ≤0.35+/2  (1)


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