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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12382789 B1

PDFFull Text
Date of Patent:
Aug. 05, 2025

Filed:

Nov. 18, 2019

Light-emitting device comprising flexible substrate and light-emitting element

Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Hiroaki Iijima, Osaka, JP;

Akihito Miyamoto, Osaka, JP;

Kenichi Sasai, Osaka, JP;

Yoshichika Osada, Osaka, JP;

Masumi Izuchi, Osaka, JP;

Assignee:

Samsung Display Co., Ltd., Yongin-si, KR;

Attorney:

Womble Bond Dickinson (US) LLP

Primary Examiner:

Yu Chen

Int. Cl.
CPC ...
H10K 59/131 (2023.01); H10K 50/844 (2023.01); H10K 59/121 (2023.01); H10K 59/123 (2023.01); H10K 59/80 (2023.01); H10K 77/10 (2023.01); H10K 50/842 (2023.01); H10K 59/124 (2023.01); H10K 59/125 (2023.01); H10K 102/00 (2023.01);
U.S. Cl.
CPC ...
H10K 59/123 (2023.02); H10K 50/844 (2023.02); H10K 50/8445 (2023.02); H10K 59/1213 (2023.02); H10K 59/131 (2023.02); H10K 59/873 (2023.02); H10K 59/8731 (2023.02); H10K 77/111 (2023.02); H10K 50/8426 (2023.02); H10K 59/124 (2023.02); H10K 59/125 (2023.02); H10K 59/8722 (2023.02); H10K 2102/311 (2023.02); Y02E 10/549 (2013.01);
Abstract

The light-emitting device includes a flexible substrate, a lower barrier layer positioned above the flexible substrate, a light-emitting element and a thin-film transistor controlling the light-emitting element positioned above the lower barrier layer, a first upper barrier layer positioned above the light-emitting element and including a first inorganic material, and a second upper barrier layer positioned above the thin-film transistor and including a second inorganic material. The first upper barrier layer and the second upper barrier layer are spaced from each other at least in a region between the light-emitting element and the thin-film transistor.

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