The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 05, 2025

Filed:

Dec. 15, 2021
Applicant:

Lg Display Co., Ltd., Seoul, KR;

Inventors:

Ji-Cheol Shin, Paju-si, KR;

Seong-Su Jeon, Paju-si, KR;

Shin-Han Kim, Paju-si, KR;

Seon-Keun Yoo, Paju-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10K 50/13 (2023.01); H10K 50/17 (2023.01); H10K 59/12 (2023.01); H10K 85/60 (2023.01); H10K 50/12 (2023.01); H10K 50/125 (2023.01);
U.S. Cl.
CPC ...
H10K 50/131 (2023.02); H10K 50/17 (2023.02); H10K 59/12 (2023.02); H10K 85/624 (2023.02); H10K 85/626 (2023.02); H10K 85/633 (2023.02); H10K 50/12 (2023.02); H10K 50/125 (2023.02);
Abstract

The present disclosure relates to an organic light emitting diode including a first electrode; a second electrode facing the first electrode; a first p-type doping layer between the first and second electrodes; a second p-type doping layer between the first p-type doping layer and the second electrode; a third p-type doping layer between the second p-type doping layer and the second electrode; a first emitting material layer between the first and second p-type doping layers; a second emitting material layer between the second and third p-type doping layers; and a third emitting material layer between the third p-type doping layer and the second electrode, wherein an electrical conductivity of the third p-type doping layer is greater than an electrical conductivity of the first p-type doping layer and is equal to or smaller than an electrical conductivity of the second p-type doping layer.


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