The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2025
Filed:
Dec. 12, 2022
Nichia Corporation, Anan, JP;
Yoshitaka Kawata, Itano-gun, JP;
Ryota Funakoshi, Anan, JP;
NICHIA CORPORATION, Anan, JP;
Abstract
A light-emitting element includes a first n-side semiconductor layer, a first active layer, a first p-side semiconductor layer, a second n-side semiconductor layer, a second active layer, and a second p-side semiconductor layer, each made of a nitride semiconductor. The second n-side semiconductor layer includes first to third layers. The first layer includes indium and gallium and has a first n-type impurity concentration. The second layer includes indium and gallium and has a second n-type impurity concentration less than the first n-type impurity concentration. A value of a composition ratio of indium in the second layer is less than a value of a composition ratio of indium in the first layer. A thickness of the second layer is greater than a thickness of the first layer. The third layer includes gallium and has a third n-type impurity concentration less than the second n-type impurity concentration.