The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 05, 2025

Filed:

Aug. 31, 2021
Applicant:

Massachusetts Institute of Technology, Cambridge, MA (US);

Inventors:

Svetlana V. Boriskina, Winchester, MA (US);

Bruno Lorenzi, Ponte San Pietro, IT;

Gang Chen, Carlisle, MA (US);

Yoichiro Tsurimaki, Cambridge, MA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10F 30/28 (2025.01); H10N 30/85 (2023.01);
U.S. Cl.
CPC ...
H10F 30/2877 (2025.01); H10N 30/85 (2023.02);
Abstract

Photo-detectors disclosed include at least one of a thin film or a heterostructure of photo-sensitive material and a pair of Ohmic contacts coupled to the at least one of the thin film or the heterostructure. The at least one of the thin film or the heterostructure is configured to be under a strain gradient to induce shift current flow within the material to perform photo-detection in a frequency range that includes a mid-infrared frequency range. The photo-detectors provided for can include a variety of configurations, such as a lateral configuration or a vertical configuration, and can operate in self-powered and negative illumination regimes. Associated methods are also provided, which can include inducing a strain gradient and performing photo-detection in a frequency range that includes a mid-infrared frequency range.


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