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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12382726 B1

PDFFull Text
Date of Patent:
Aug. 05, 2025

Filed:

Feb. 12, 2024

Capacitor structures

Applicant:

Lodestar Licensing Group Llc, Evanston, IL (US);

Inventors:

Vladimir Mikhalev, Boise, ID (US);

Michael P. Violette, Boise, ID (US);

Assignee:

Lodestar Licensing Group LLC, Evanston, IL (US);

Attorney:

TraskBritt

Primary Examiner:

Feifei Yeung Lopez

Int. Cl.
CPC ...
H10D 89/60 (2025.01); G11C 7/24 (2006.01); G11C 16/04 (2006.01); G11C 16/30 (2006.01); H01L 23/60 (2006.01); H01L 23/62 (2006.01); H10B 41/20 (2023.01); H10B 41/40 (2023.01); H10B 43/20 (2023.01); H10B 43/40 (2023.01); H10D 1/68 (2025.01); H10D 8/25 (2025.01); H10D 62/83 (2025.01); H10D 64/62 (2025.01);
U.S. Cl.
CPC ...
H10D 89/60 (2025.01); G11C 7/24 (2013.01); G11C 16/0483 (2013.01); G11C 16/30 (2013.01); H01L 23/60 (2013.01); H01L 23/62 (2013.01); H10B 41/20 (2023.02); H10B 41/40 (2023.02); H10B 43/20 (2023.02); H10B 43/40 (2023.02); H10D 1/692 (2025.01); H10D 8/25 (2025.01); H10D 62/83 (2025.01); H10D 64/62 (2025.01); H10D 89/921 (2025.01);
Abstract

A capacitor structure comprises a first conductive region having a first conductivity type and a second conductive region having a second conductivity type different than the first conductivity type. The first conductive region comprises a first protrusion portion and a second protrusion portion. The second conductive region comprises a protrusion portion. The capacitor structure further comprises a first dielectric overlying the first protrusion portion of the first conductive region, and a first conductor overlying the first dielectric. Additionally, the capacitor structure comprises a terminal of a diode overlying the second protrusion portion of the first conductive region and the protrusion portion of the second conductive region. The terminal of the diode comprises a second conductor isolated from the first conductor.

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