The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2025
Filed:
Aug. 17, 2023
Applicant:
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Inventors:
Shunpei Yamazaki, Tokyo, JP;
Kensuke Yoshizumi, Kanagawa, JP;
Assignee:
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 87/00 (2025.01); H10B 12/00 (2023.01); H10B 41/70 (2023.01); H10D 30/67 (2025.01); H10D 84/00 (2025.01); H10D 88/00 (2025.01); G11C 16/10 (2006.01); H10B 41/20 (2023.01); H10B 41/30 (2023.01); H10D 62/80 (2025.01); H10D 86/00 (2025.01); H10D 86/01 (2025.01);
U.S. Cl.
CPC ...
H10D 87/00 (2025.01); H10B 12/00 (2023.02); H10B 41/70 (2023.02); H10D 30/673 (2025.01); H10D 84/00 (2025.01); H10D 88/00 (2025.01); G11C 16/10 (2013.01); H10B 12/30 (2023.02); H10B 41/20 (2023.02); H10B 41/30 (2023.02); H10D 62/80 (2025.01); H10D 86/01 (2025.01); H10D 86/201 (2025.01);
Abstract
A semiconductor device is described, which includes a first transistor, a second transistor, and a capacitor. The second transistor and the capacitor are provided over the first transistor so as to overlap with a gate of the first transistor. A semiconductor layer of the second transistor and a dielectric layer of the capacitor are directly connected to the gate of the first transistor. The second transistor is a vertical transistor, where its channel direction is perpendicular to an upper surface of a semiconductor layer of the first transistor.