The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2025
Filed:
Sep. 29, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Hyun-Yong Yu, Seoul, KR;
Seung Geun Jung, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
KOREA UNIVERSITY Research and Business Foundation, Seoul, KR;
Abstract
A semiconductor device may include an active pattern on a substrate, a lower channel pattern on the active pattern and including first and second lower semiconductor patterns, an upper channel pattern on the lower channel pattern and including first and second upper semiconductor patterns, a pair of lower source/drain patterns on opposite sides of the lower channel pattern and a pair of upper source/drain patterns on opposite sides of the upper channel pattern, and a gate electrode surrounding the lower and upper channel patterns. The gate electrode may include a first upper portion between the first and second upper semiconductor patterns, and a first lower portion between the first and second lower semiconductor patterns. Each semiconductor pattern may include a first recess part having a first recess region on a top surface thereof, and a first protrusion part protruding from a bottom surface of the first recess part.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile