The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2025
Filed:
Mar. 17, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Seojin Jeong, Suwon-si, KR;
Jungtaek Kim, Suwon-si, KR;
Moonseung Yang, Suwon-si, KR;
Sumin Yu, Suwon-si, KR;
Edward Namkyu Cho, Suwon-si, KR;
Seokhoon Kim, Suwon-si, KR;
Pankwi Park, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Abstract
An integrated circuit (IC) device includes a fin-type active region, a channel region on the fin-type active region, a gate line surrounding the channel region on the fin-type active region, a source/drain region that is adjacent to the gate line on the fin-type active region and has a sidewall facing the channel region, wherein the source/drain region includes a first buffer layer, a second buffer layer, and a main body layer, which are sequentially stacked in a direction away from the fin-type active region, each include a SiGelayer (x≠0) doped with a p-type dopant, and have different Ge concentrations, and the second buffer layer conformally covers a surface of the first buffer layer that faces the main body layer. A thickness ratio of the side buffer portion to the bottom buffer portion is in a range of about 0.9 to about 1.1.