The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 05, 2025

Filed:

Dec. 22, 2020
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventor:

Hiroyuki Okazaki, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 64/23 (2025.01); H10D 62/83 (2025.01); H10D 64/01 (2025.01); H10D 64/62 (2025.01); H10D 64/64 (2025.01);
U.S. Cl.
CPC ...
H10D 64/256 (2025.01); H10D 62/83 (2025.01); H10D 64/01 (2025.01); H10D 64/62 (2025.01); H10D 64/64 (2025.01);
Abstract

A semiconductor substrate () includes a front surface and a back surface opposite to each other, and a through-hole () penetrating from the back surface to the front surface. A metal film () surrounding the through-hole () is formed in a ring shape on the front surface. A front-surface electrode () includes a wiring electrode () covering the through-hole () and the metal film () and is joined to the front surface outside the metal film (). A back-surface electrode () is formed on the back surface and inside the through-hole () and connected to the wiring electrode (). The metal film () has a lower ionization tendency and a higher work function than the wiring electrode ().


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