The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 05, 2025

Filed:

Sep. 20, 2021
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Mattias Dahlstrom, Los Altos, CA (US);

Thomas James Moutinho, Gorham, ME (US);

Craig Printy, Buxton, ME (US);

Wibo Van Noort, Scarborough, ME (US);

Tatsuya Tominari, Plano, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/13 (2025.01); H10D 10/01 (2025.01); H10D 10/40 (2025.01);
U.S. Cl.
CPC ...
H10D 62/133 (2025.01); H10D 10/01 (2025.01); H10D 10/40 (2025.01);
Abstract

A semiconductor device include a first semiconductor layer with a first doping concentration. A second semiconductor layer has a second doping concentration and has a first surface and a second opposing surface. The second doping concentration is higher than the first doping concentration. The first surface of the second semiconductor layer is in contact with the first semiconductor layer. A contact is on the second surface of the second semiconductor layer. The contact includes a metal and a semiconductor.


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