The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2025
Filed:
Apr. 06, 2023
Csmc Technologies Fab2 Co., Ltd., Wuxi, CN;
Teng Liu, Wuxi, CN;
Nailong He, Wuxi, CN;
Lihui Gu, Wuxi, CN;
Sen Zhang, Wuxi, CN;
Wentong Zhang, Wuxi, CN;
CSMC TECHNOLOGIES FAB2 CO., LTD., Jiangsu, CN;
Abstract
The semiconductor device comprises a high-voltage device region, a low-voltage device region, and an isolation region. It further comprises a drift region, a second conductivity type well region, an isolation well region, an isolation structure, a power device source region, and a power device drain region. The drift region is disposed in the high-voltage device region. The second conductivity type well region is disposed in the isolation region and extends to the low-voltage device region. The isolation well region is disposed in the drift region and separates the drift region into a high-voltage drift region and a power device drift region. The isolation structure is disposed in the isolation well region. The power device source region is disposed in the isolation region and located in the second conductivity type well region, and the power device drain region is disposed in the power device drift region.