The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2025
Filed:
Nov. 29, 2022
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Abstract
A semiconductor device, which comprises a semiconductor substrate, an epitaxial layer, first metal structures, first doped regions, second metal structures, second doped regions, a conductive layer and a Schottky layer. The epitaxial layer is disposed on the semiconductor substrate. The first metal structures are disposed in the epitaxial layer. The first metal structures extend along a first direction and have a first width in a second direction. The first doped regions are disposed in the epitaxial layer and extend from below each first metal structure to the sidewall of each first metal structure. The second metal structure is disposed in the epitaxial layer. The second metal structures extend along the first direction and have a second width in the second direction, wherein the first width is larger than the second width. The conductive layer is disposed under the semiconductor substrate, and the Schottky layer is disposed on the epitaxial layer.